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February 1999
FDC658P
Single P-Channel, Logic Level, PowerTrench TM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-4 A, -30 V. R DS(ON) = 0.050 ? @ V GS = -10 V
R DS(ON) = 0.075 ? @ V GS = -4.5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low
R DS(ON) .
SuperSOT TM -6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
D
S
1
6
.65
D
8
2
5
G
SuperSOT
TM
-6
pin 1
D
D
3
4
Absolute Maximum Ratings
T A = 25°C unless otherwise note
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Ratings
-30
±20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
-4
A
- Pulsed
-20
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
? 1999 Fairchild Semiconductor Corporation
FDC658P Rev.C
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